Product Introduction

Micro- and Nanofabrication capabilities

2025-10-23

With the support of advanced equipment clusters, profound process accumulation and cross-disciplinary technology integration capabilities, we comprehensively cover the core links of micro-nano processing, and can deliver reliable and precise products and efficient collaborative services. At present, we have achievedmaturing coverage of 2/4/6-inch wafer processing, and some equipment and processes support8-inch wafer的需求, to solve the industry's composite challenges with technical strength.


1. Core process matrix: Precise control of every step of the processing details

Focusing on the three core aspects of "precision, compatibility, and efficiency," we have built a process system that covers the entire flow of processes, including coating, photolithography, and bonding. Key parameters have reached the leading level in the industry, meeting the manufacturing needs of micro-nano structures in different scenarios.

1. Deposition process: full-field deposition, nano-level film system architecture

For the demand of single-layer film and complex stack, through multi-material compatible system and cross-process integration (ALD/PVD/plasma enhanced CVD), the film system with nano-level precision is realized, which synchronously guarantees yield and cost efficiency, and supports the full scenario from scientific research customization to mass production.

Technology typeKey capability indicatorsMainstream material systemAdaptable substrate
Electron beam evaporationIntratrain uniformity 1%@4 inches, 3%@8 inches; train-to-train stability ≤1%/furnace; intratrain uniformity ≤1%.Metal (Ti/Al/Ni/Au/Ag/Cr/Pt/Cu, etc.); Non-metal (SiO₂/SiNₓ/Al₂O₃/HfO₂/MgF₂/ITO, etc.).2-8 inch silicon wafers, quartz, sapphire, ZnSe/ZnS, S-glass and composite structures
Magnetron sputtering/ALD/LPCVD/PECVDMulti-process synergy, adapting to complex film designMetal/dielectric/compound multi-type material compatibilityAs above, support customized substrate adaptation.
Optical filmSuper smooth coating accuracy Ra ≤ 0.5nm (film thickness ≥ 10μm)High-transparency/High-reflectance optical special materialsOptical device specific substrate

Additional Support:Open target material self-adaptive channel to accelerate customer's cutting-edge material verification process.

2. Photolithography process: ultra-fine pattern transfer, versatile for multiple sizes

Covering the full precision range from electronic beam lithography to DUV photolithography, it can achieve pattern transfer at the 10nm-1μm level, meeting the fineness requirements of different devices, and the substrate size is flexibly adapted to small samples to large-size wafers.

Technology typeKey capability indicatorsAdaptation material and substrate
Electron beam lithography (EBL)Accelerating voltage 100 kV, minimum line width 10 nmSilicon/SOI/Quartz/LiNbO3/Film LiNbO3; Substrate sizes 15mm x 15mm, 20mm x 20mm, 2 inches
DUV photolithographyWavelength 248nm, minimum line width 150nm; design size 22mm x 22mm4/6/8 inch wafer
Contact UV photolithographyResolution 1μm, exposure wavelength 365nm; light intensity uniformity ±3%.2-6 inch substrate, sample thickness 0.1-6mm
Laser writingMinimum line width 1μm; front side alignment ≤ 0.5μm, back side alignment ≤ 1μmSubstrates of 150mm×150mm and below

3. Bonding process: low-temperature compatible, thickness without deviation

Supports anodizing bonding, eutectic bonding, Si-Si/Al₂O₃-Al₂O₃ bonding at room temperature, with bonding temperatures coveringroom temperature to 400℃, release materials with weathering limitations, bonding thickness without deviation, compatible with2/4/6/8-inch wafers, ensuring the reliability of device packaging.

4. Other core processes

Nanoprinting

Customizable nickel master plate/polymer master plate, adapted to substrates such as sapphire, quartz, silicon, etc., to achieve efficient replication of micro-nano structures.

Cutting process

Covering laser hidden cutting, blade wheel cutting, infrared cutting, cutting accuracy ≤ 20μm, support ≤ 8 inches substrate, ensuring device forming consistency.

Ion beam polishing

For silicon/SOI/quartz substrates (≤4 inches), polishing accuracy up to 0.3nm@15×15μm, achieving ultra-smooth surface processing.

Single-point diamond turning and injection molding

Specializing in the manufacture of complex free-form optical components, with no shrinkage in the surface profile and superior accuracy, meeting the geometric shape requirements of high-end optical elements.

2. Infrared detection service: High-precision material analysis solution.

Fourier infrared spectroscopy detection system

We are equipped with advanced Fourier infrared spectrometer, providing high-precision infrared spectroscopy analysis services for a variety of materials, supporting the full process of quality control and material property research from R&D to production, and widely used in the testing needs of micro-nano devices, optical films, composite materials and other fields.

Parameter categoryDetailed indicators
Equipment model numberBRUKER INVENIO-S
Test itemsAbsorption spectroscopy analysis, reflection spectroscopy analysis, transmission spectroscopy analysis
Band range8000-400cm⁻¹
Spectral accuracy0.4cm⁻¹
Signal-to-noise ratio60000:1 (P/P, 4cm⁻¹ resolution)

Service advantages

  • High-resolution detection capability, capturing subtle structural features of materials

  • Broadband coverage, meeting the inspection needs of a variety of material systems

  • Professional data analysis team, providing customized detection reports and interpretation.

  • Flexible testing solutions, supporting scientific research sample and mass production batch testing

Three, Special Process Solutions: Targeted solutions to industry pain points.

Based on years of industry experience, we have developed dedicated processes for specific application scenarios, providing customers with "tailor-made" technical solutions:

  • Low temperature ALD packaging process: Excellent performance in depth ratio, WVTR ≤ 10⁻⁵@ double 85 test, meets the demand for high reliability packaging.

  • Spectral 3D Array: Channel number ≥ 30, Z-axis accuracy ≤ 1nm, XY-axis resolution ≤ 5μm, Adapted for spectral detection devices.

  • Non-spherical micro-lens array processing: shrinkage rate ≤ 1%, surface roughness Ra ≤ 5nm, surface accuracy RMS ≤ 0.1μm, PV ≤ 1μm, ensuring stable optical performance.

  • DUV processing of superstructures and EBL Si wafers MS DOE: Supporting the manufacturing of ultra-fine micro纳structures, providing technical support for cutting-edge device research and development.

  • Mass production of low-cost wafers coating: Balancing mass production efficiency and cost to meet the industry's large-scale application needs.

IV. Cross-border Synergy: Creating Composite Value through Technological Coupling

With the interdisciplinary accumulation of semiconductor micro-nano processing, optics, MEMS, and laser technology, we break the limitations of a single process and build a synergistic advantage in device architecture design, process chain integration, and system-level optimization.

From "single processing" to "integrated solutions", we help customers overcome complex technical issues with cross-border insights, continuously creating added value beyond traditional processing, and becoming your reliable partner on the road of innovation.